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Preliminary Technical Information
Depletion Mode MOSFET
IXTY1R6N100D2 IXTA1R6N100D2 IXTP1R6N100D2
VDSX ID(on)
RDS(on)
= >
1000V 1.6A 10
N-Channel
TO-252 (IXTY)
G S
D (Tab)
Symbol VDSX VGSX VGSM PD TJ TJM Tstg TL TSOLD Md Weight
Test Conditions TJ = 25C to 150C Continuous Transient TC = 25C
Maximum Ratings 1000 20 30 100 - 55 ... +150 150 - 55 ... +150 V V V W C C C C C Nm/lb.in. g g g
G DS D (Tab) G S D (Tab)
TO-263 AA (IXTA)
TO-220AB (IXTP)
1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Mounting Torque (TO-220) TO-252 TO-263 TO-220
300 260 1.13 / 10 0.35 2.50 3.00
G = Gate S = Source
D = Drain Tab = Drain
Features * Normally ON Mode * International Standard Packages * Molding Epoxies Meet UL 94 V-0 Flammability Classification V - 4.5 V Advantages * Easy to Mount * Space Savings * High Power Density Applications * * * * * * Audio Amplifiers Start-Up Circuits Protection Circuits Ramp Generators Current Regulators Active Loads
Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVDSX VGS(off) IGSX IDSX(off) RDS(on) ID(on) VGS = - 5V, ID = 250A VDS = 25V, ID = 100A VGS = 20V, VDS = 0V VDS = VDSX, VGS= - 5V VGS = 0V, ID = 0.8A, Note 1 VGS = 0V, VDS = 50V, Note 1 TJ = 125C
Characteristic Values Min. Typ. Max. 1000 - 2.5
100 nA 2 A 25 A 10 1.6 A
(c) 2009 IXYS CORPORATION, All Rights Reserved
DS100185A(12/09)
IXTY1R6N100D2 IXTA1R6N100D2 IXTP1R6N100D2
Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCS TO-220 VGS = 5V, VDS = 500V, ID = 0.8A Resistive Switching Times VGS = 5V, VDS = 500V, ID = 0.8A RG = 5 (External) VGS = -10V, VDS = 25V, f = 1MHz VDS = 30V, ID = 0.8A, Note 1 Characteristic Values Min. Typ. Max. 0.65 1.10 645 43 11 27 65 34 41 27.0 1.6 13.5 0.50 S pF pF pF ns ns ns ns nC nC nC 1.25 C/W C/W
A A1 A2 b b1 b2 c c1 Dim. Millimeter Min. Max. 2.19 0.89 0 0.64 0.76 5.21 0.46 0.46 5.97 4.32 6.35 4.32 2.38 1.14 0.13 0.89 1.14 5.46 0.58 0.58 6.22 5.21 6.73 5.21
1. Gate 2. Drain 3. Source 4. Drain Bottom Side
TO-252 AA (IXTY) Outline
Inches Min. Max. 0.086 0.035 0 0.025 0.030 0.205 0.018 0.018 0.235 0.170 0.250 0.170 0.094 0.045 0.005 0.035 0.045 0.215 0.023 0.023 0.245 0.205 0.265 0.205
Safe-Operating-Area Specification Symbol SOA Test Conditions VDS = 800V, ID = 75mA, TC = 75C, Tp = 5s Characteristic Values Min. Typ. Max. 60 W
D D1 E E1 e e1 H L
2.28 BSC 4.57 BSC 9.40 10.42 0.51 1.02 0.64 0.89 2.54 1.02 1.27 2.92
0.090 BSC 0.180 BSC 0.370 0.020 0.025 0.035 0.100 0.410 0.040 0.040 0.050 0.115
Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) VSD trr IRM QRM IF = 1.6A, VGS = -10V, Note 1 IF = 1.6A, -di/dt = 100A/s VR = 100V, VGS = -10V Characteristic Values Min. Typ. Max. 0.8 970 9.96 4.80 1.3 V ns A C
L1 L2 L3
TO-220 (IXTP) Outline
Note 1. Pulse test, t 300s, duty cycle, d 2%. TO-263 (IXTA) Outline
Dim. A b b2 c c2 D D1 E 1. 2. 3. 4. Gate Drain Source Drain Bottom Side E1 e L L1 L2 L3 L4 Millimeter Min. Max. 4.06 0.51 1.14 0.40 1.14 8.64 8.00 9.65 6.22 2.54 14.61 2.29 1.02 1.27 0 4.83 0.99 1.40 0.74 1.40 9.65 8.89 10.41 8.13 BSC 15.88 2.79 1.40 1.78 0.13 Inches Min. Max. .160 .020 .045 .016 .045 .340 .280 .380 .270 .100 .575 .090 .040 .050 0 .190 .039 .055 .029 .055 .380 .320 .405 .320 BSC .625 .110 .055 .070 .005 Pins: 1 - Gate 3 - Source 2 - Drain 4 - Drain
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2
IXTY1R6N100D2 IXTA1R6N100D2 IXTP1R6N100D2
Fig. 1. Output Characteristics @ T J = 25C
1.6 1.4 1.2 VGS = 5V 1V 0V 4.0 3.5 3.0 0V VGS = 5V 2V 1V
Fig. 2. Extended Output Characteristics @ T J = 25C
ID - Amperes
0.8 0.6 0.4 0.2
-1V
ID - Amperes
1.0
2.5 2.0 -1V 1.5 1.0 0.5 - 2V - 3V 0 10 20 30 40 50 60 70 80
- 2V
- 3V 0.0 0 2 4 6 8 10 12 14 0.0
VDS - Volts
VDS - Volts
Fig. 3. Output Characteristics @ T J = 125C
1.6 1.4 1.2 VGS = 5V 1V 0V
1E-01 1E-02 1E-03
Fig. 4. Drain Current @ T J = 25C
VGS = - 3.25V - 3.50V
ID - Amperes
ID - Amperes
1.0 0.8 0.6 0.4 0.2 0.0 0 4 8 12 16 20
-1V
1E-04 1E-05
- 3.75V - 4.00V - 4.25V
- 2V
1E-06 1E-07 1E-08 1E-09
- 4.50V - 4.75V
- 3V 24 28 32
0
100
200
300
400
500
600
700
800
900
1000 1100 1200
VDS - Volts
VDS - Volts
Fig. 5. Drain Current @ T J = 100C
1.E-01 1.E+12 1.E+11 1.E+10 1.E+09 1.E+08 1.E+07 1.E+06 1.E+05 1.E+04
Fig. 6. Dynamic Resistance vs. Gate Voltage
VDS = 700V - 100V
1.E-02
VGS = - 3.50V - 3.75V
1.E-03
ID - Amperes
R O - Ohms
- 4.00V - 4.25V - 4.50V - 4.75V
1.E-04
TJ = 25C
1.E-05
TJ = 100C
1.E-06
1.E-07
0
100
200
300
400
500
600
700
800
900
1000 1100 1200
-4.8
-4.6
-4.4
-4.2
-4.0
-3.8
-3.6
-3.4
-3.2
VDS - Volts
VGS - Volts
(c) 2009 IXYS CORPORATION, All Rights Reserved
IXTY1R6N100D2 IXTA1R6N100D2 IXTP1R6N100D2
Fig. 7. Normalized RDS(on) vs. Junction Temperature
2.6 VGS = 0V 2.2 I D = 0.8A 2.6 2.4 2.2 VGS = 0V 5V - - - -
Fig. 8. RDS(on) Normalized to ID = 0.8A Value vs. Drain Current
R DS(on) - Normalized
R DS(on) - Normalized
1.8
2.0 1.8 1.6 1.4 1.2 1.0 0.8 TJ = 25C TJ = 125C
1.4
1.0
0.6
0.2 -50 -25 0 25 50 75 100 125 150
0.6 0.0 0.5 1.0 1.5 2.0 2.5 3.0
TJ - Degrees Centigrade
ID - Amperes
Fig. 9. Input Admittance
2.5 VDS= 30V 2.0 2.2 2.0 1.8 1.6 VDS= 30V
Fig. 10. Transconductance
TJ = - 40C
g f s - Siemens
ID - Amperes
1.5
1.4 1.2 1.0 0.8 0.6
25C 125C
1.0
TJ = 125C 25C - 40C
0.5
0.4 0.2
0.0 -4.0
0.0 -3.5 -3.0 -2.5 -2.0 -1.5 -1.0 -0.5 0.0 0 0.5 1 1.5 2 2.5
VGS - Volts
ID - Amperes
Fig. 11. Breakdown and Threshold Voltages vs. Junction Temperature
1.3 5 VGS= -10V 1.2
Fig. 12. Forward Voltage Drop of Intrinsic Diode
BV / VGS(off) - Normalized
4 VGS(off) @ VDS = 25V
1.1 BVDSX @ VGS = - 5V 1.0
IS - Amperes
3
2 TJ = 125C
0.9
1
TJ = 25C
0.8 -50 -25 0 25 50 75 100 125 150
0 0.3 0.4 0.5 0.6 0.7 0.8 0.9
TJ - Degrees Centigrade
VSD - Volts
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTY1R6N100D2 IXTA1R6N100D2 IXTP1R6N100D2
Fig. 13. Capacitance
10,000 5
Fig. 14. Gate Charge
4 VDS = 500V I D = 0.8A I G = 1mA
f = 1 MHz
Ciss
3 2
Capacitance - PicoFarads
1,000
VGS - Volts
1 0 -1 -2
100
Coss
10 Crss
-3 -4
1 0 5 10 15 20 25 30 35 40
-5 0 5 10 15 20 25
VDS - Volts
QG - NanoCoulombs
Fig. 15. Forward-Bias Safe Operating Area @ T C = 25C
10.00 RDS(on) Limit 100s 1.00 1.00 1ms 10ms 0.10 TJ = 150C TC = 25C Single Pulse 0.01 10.00 10 100 100ms DC 10.00
Fig. 16. Forward-Bias Safe Operating Area @ T C = 75C
RDS(on) Limit 25s 100s
ID - Amperes
ID - Amperes
1ms 10ms 100ms TJ = 150C TC = 75C Single Pulse DC
0.10
Fig. 17. Maximum Transient Thermal Impedance
0.01 1,000 10 100 1,000
VDS - Volts
VDS - Volts
Fig. 17. Maximum Transient Thermal Impedance
2.00 1.00
hvjv
Z (th)JC - C / W
0.10
0.01 0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
(c) 2009 IXYS CORPORATION, All Rights Reserved
IXYS REF: T_1R6N100D2(2C)8-24-09

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